DocumentCode :
851124
Title :
Properties and device applications of evaporated InSb films
Author :
Wieder, H.H.
Author_Institution :
U. S. Naval Ordnance Lab., Corona, Calif.
Volume :
51
Issue :
3
fYear :
1963
fDate :
3/1/1963 12:00:00 AM
Firstpage :
513
Lastpage :
514
Abstract :
Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
Keywords :
Anisotropic magnetoresistance; Conducting materials; Germanium; Hall effect; Impurities; Indium; Plasma temperature; Semiconductor films; Thermoelectric devices; Thermoelectricity;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.1966
Filename :
1443896
Link To Document :
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