DocumentCode :
851144
Title :
Impact ionization in gold-doped silicon
Author :
Frescura, B.L.
Author_Institution :
526 North 21st st., Corvallis, Ore.
Volume :
51
Issue :
3
fYear :
1963
fDate :
3/1/1963 12:00:00 AM
Firstpage :
514
Lastpage :
514
Abstract :
Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
Keywords :
Anisotropic magnetoresistance; Conducting materials; Crystalline materials; Degradation; Impact ionization; Silicon; Thermoelectric devices; Thin film circuits; Thin film transistors; Voltage control;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.1968
Filename :
1443898
Link To Document :
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