• DocumentCode
    851144
  • Title

    Impact ionization in gold-doped silicon

  • Author

    Frescura, B.L.

  • Author_Institution
    526 North 21st st., Corvallis, Ore.
  • Volume
    51
  • Issue
    3
  • fYear
    1963
  • fDate
    3/1/1963 12:00:00 AM
  • Firstpage
    514
  • Lastpage
    514
  • Abstract
    Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
  • Keywords
    Anisotropic magnetoresistance; Conducting materials; Crystalline materials; Degradation; Impact ionization; Silicon; Thermoelectric devices; Thin film circuits; Thin film transistors; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.1968
  • Filename
    1443898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=851144