• DocumentCode
    851162
  • Title

    Transistor reliability after radiation exposure

  • Author

    Gardner, L.B.

  • Author_Institution
    Northrop Space Labs., Hawthorne, Calif.
  • Volume
    51
  • Issue
    3
  • fYear
    1963
  • fDate
    3/1/1963 12:00:00 AM
  • Firstpage
    514
  • Lastpage
    514
  • Abstract
    Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
  • Keywords
    Batteries; Degradation; Gamma rays; Neutrons; Nuclear and plasma sciences; Power system reliability; Satellites; Semiconductor diodes; Steady-state; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.1969
  • Filename
    1443899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=851162