Title :
Thermally induced nonlinearities in high-speed p-i-n photodetectors
Author :
Stievater, T.H. ; Williams, K.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Nonlinearities in the responsivity of high-speed p-i-n photodetectors at high photocurrents can limit the useful dynamic range in photonic systems. This letter describes a nonlinearity in the quantum efficiency in InGaAs photodetectors designed for applications at 1.5 μm is due to significant ohmic heating of the intrinsic region. Measured changes in responsivity of about 10% at photocurrents of 12 mA are attributed to a thermal bandgap shift, based on comparisons with temperature dependent measurements and a model of ohmic heating.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; thermo-optical effects; 1.5 micron; 12 mA; InGaAs; dynamic range; equilibrium temperature rise; high-speed p-i-n photodetectors; ohmic heating; photocurrent spectra; pulsed measurements; quantum efficiency; responsivity; thermal bandgap shift; thermally induced nonlinearities; Distributed feedback devices; Heating; Indium gallium arsenide; Optical receivers; PIN photodiodes; Photoconductivity; Photodetectors; Pulse measurements; Radio frequency; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.819369
