Thermally induced nonlinearities in high-speed p-i-n photodetectors

Author

Stievater, T.H. ; Williams, K.J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

16

Issue

1

fYear

2004

Firstpage

239

Lastpage

241

Abstract

Nonlinearities in the responsivity of high-speed p-i-n photodetectors at high photocurrents can limit the useful dynamic range in photonic systems. This letter describes a nonlinearity in the quantum efficiency in InGaAs photodetectors designed for applications at 1.5 μm is due to significant ohmic heating of the intrinsic region. Measured changes in responsivity of about 10% at photocurrents of 12 mA are attributed to a thermal bandgap shift, based on comparisons with temperature dependent measurements and a model of ohmic heating.

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; thermo-optical effects; 1.5 micron; 12 mA; InGaAs; dynamic range; equilibrium temperature rise; high-speed p-i-n photodetectors; ohmic heating; photocurrent spectra; pulsed measurements; quantum efficiency; responsivity; thermal bandgap shift; thermally induced nonlinearities; Distributed feedback devices; Heating; Indium gallium arsenide; Optical receivers; PIN photodiodes; Photoconductivity; Photodetectors; Pulse measurements; Radio frequency; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.819369

Filename

1256011