Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3-μm telecommunication wavelength

Author

Shi, Jin-Wei ; Chen, Yen-Hung ; Gan, Kian-Giap ; Chiu, Yi-Jen ; Bowers, John E. ; Tien, Ming-Chun ; Liu, Tzu-Ming ; Sun, Chi-Kuang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taiwan, Taiwan

Volume

16

Issue

1

fYear

2004

Firstpage

242

Lastpage

244

Abstract

We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; hot carriers; metal-semiconductor-metal structures; photodetectors; transient response; 1.3 micron; GaAs; bandwidth degradation; carrier dynamics; carrier lifetime increase; electrooptical sampling; hot electron effect; impulse responses; low-temperature-grown photodetectors; metal-semiconductor-metal devices; modal absorption constants; nonlinear behavior; photoabsorption process; photogenerated carriers; traveling-wave photodetectors; ultrafast optoelectronics; Absorption; Bandwidth; Degradation; Gallium arsenide; Gallium nitride; Photoconducting materials; Photodetectors; Photonic band gap; Sun; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.819418

Filename

1256012