DocumentCode
851401
Title
Intense and sharply structured 1.54 μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE
Author
Charasse, M.N. ; Grattepain, C. ; Chazelas, J. ; Hirtz, J.P.
Author_Institution
Thomson CSF-LCE, Orsay
Volume
24
Issue
23
fYear
1988
fDate
11/10/1988 12:00:00 AM
Firstpage
1458
Lastpage
1460
Abstract
Er doping of GaAs, AlGaAs and quantum wells (QW) has been achieved by MBE. A new type of Er3+ centre is observed in AlGaAs and QW structures, which is characterised by a main peak at 1.565 μm at 4.5 K. At 300 K, the main peak is always at 1.54 μm. In the case of QW structures, its linewidth goes down to only 1 MeV and it is surrounded by up to 16 less intense peaks
Keywords
III-V semiconductors; aluminium compounds; erbium; gallium arsenide; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor quantum wells; spectral line breadth; 1.54 micron; Er3+ centre; GaAs-AlGaAs:Er; MBE; linewidth; photoluminescence; quantum wells; room-temperature luminescence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
46107
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