A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants

Author

Betta, Gian-Franco Dalla ; Boscardin, Maurizio ; Bosisio, Luciano ; Dittongo, Selenia ; Gregori, Paolo ; Rachevskaia, Irina ; Verzellesi, Giovanni ; Zorzi, Nicola

Author_Institution

Divisione Microsistemi, ITC-IRST, Trento, Italy

Volume

49

Issue

4

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1712

Lastpage

1716

Abstract

A novel termination structure for silicon microstrip detectors is proposed, featuring all p-type multiguard and scribe-line implants, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved both prior and after 1×10¹² cm^-2 neutron irradiation.

Keywords

neutron effects; silicon radiation detectors; Si; Si microstrip detector; bias voltages; metal field-plates; neutron irradiation; p-type multiguard implants; passivation-oxide external surface; scribe-line implants; termination structure; Implants; Microstrip components; Neutrons; Particle tracking; Physics; Radiation detectors; Silicon; Stability; Testing; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.801695

Filename

1043459