• DocumentCode
    851586
  • Title

    Room-Temperature Continuous-Wave Operation of 2.3- \\mu m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

  • Author

    Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, F.

  • Author_Institution
    Inst. Electron. du Sud (IES), Montpellier II Univ., Montpellier
  • Volume
    20
  • Issue
    20
  • fYear
    2008
  • Firstpage
    1745
  • Lastpage
    1747
  • Abstract
    Room-temperature continuous-wave (CW) operation of GaSb-based monolithic microcavity vertical-cavity surface-emitting lasers operating near 2.3 mum is presented. These devices were composed of two n-doped AlAsSb-GaSb Bragg mirrors, a type-I GaInAsSb-AlGaAsSb multiquantum-well active region, and an n++-InAsSb/p++-GaSb tunnel junction. CW laser operation was observed up to 294 K. A CW threshold current density as low as 1.1 kA ldr cm-2 was obtained at 284 K for 60-mum-diameter devices (20-mum-diameter emitting area).
  • Keywords
    III-V semiconductors; aluminium compounds; arsenic compounds; gallium compounds; laser beams; laser cavity resonators; laser mirrors; optical pumping; quantum well lasers; surface emitting lasers; AlAsSb-GaSb; CW threshold current density; GaInAsSb-AlGaAsSb; Sb-based electrically pumped monolithic VCSEL; microcavity vertical-cavity surface-emitting lasers; n-doped Bragg mirrors; room-temperature CW laser operation; size 60 mum; temperature 293 K to 298 K; tunnel junction; type-I multiquantum-well active region; wavelength 2.3 mum; Electrically pumped; GaSb; tunnel junction (TJ); vertical-cavity surface-emitting laser (VCSEL);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2004997
  • Filename
    4610950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=851586