DocumentCode :
851615
Title :
Design of Low 
High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure
Author :
Lu, Qiaoyin ; Guo, Weihua ; Byrne, Diarmuid ; Donegan, John F.
Author_Institution :
Sch. of Phys. & Centre for Telecommun. Value-Chain Driven Res., Semicond. Photonics Group, Trinity Coll. Dublin, Dublin
Volume :
20
Issue :
21
fYear :
2008
Firstpage :
1805
Lastpage :
1807
Abstract :
GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V V pi are predicted for a 5-mm-long modulator.
Keywords :
III-V semiconductors; electro-optical modulation; finite difference time-domain analysis; gallium arsenide; high-speed optical techniques; phase modulation; 2-D finite-difference time-domain technique; GaAs; Pade approximation transform; coplanar waveguide traveling-wave electrodes; high-speed travelling-wave electrooptic phase modulators; n-i-p-n structure; size 5 mm; 2-D finite-difference time-domain (FDTD) method; Electrooptic modulator; PadÉ approximation transform; traveling-wave (TW) electrodes;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.2005009
Filename :
4610955
Link To Document :
