• DocumentCode
    851911
  • Title

    Polycrystalline mercuric iodide films: deposition, properties, and detector performance

  • Author

    Roy, U.N. ; Cui, Y. ; Wright, G. ; Barnett, C. ; Burger, A. ; Franks, L.A. ; Bell, Z.W.

  • Author_Institution
    Center for Photonic Mater. & Devices, Fisk Univ., Nashville, TN, USA
  • Volume
    49
  • Issue
    4
  • fYear
    2002
  • fDate
    8/1/2002 12:00:00 AM
  • Firstpage
    1965
  • Lastpage
    1967
  • Abstract
    We report the room-temperature α-particle response of a detector fabricated from high-purity polycrystalline mercuric iodide thin films. The films are deposited by physical vapor technique using multipassed zone refined high-purity starting material. Films approximately 15 μm thick were deposited on indium-tin-oxide (ITO) coated glass substrate and were shown to be reasonably compact and have uniform surface morphology by cross-sectional scanning electron microscopy study. Photoluminescence at 10 K showed two distinct peaks at 533 nm and around 560 nm. A previously reported peak at ∼620 nm, mainly attributed to the presence of impurities, was not present. Room-temperature α-particle response measurements were carried out under vacuum and demonstrated that efficient charge collection can be obtained with thin polycrystalline HgI2. We have demonstrated that a full energy peak is developed, although first indications are that the performance is significantly poorer than a silicon charged particle detector. Charge collection was found to improve with voltage, as expected.
  • Keywords
    alpha-particle detection; mercury compounds; photoluminescence; scanning electron microscopy; semiconductor counters; semiconductor materials; surface structure; vapour deposited coatings; vapour deposition; 10 K; 15 micron; 293 K; 533 nm; 560 nm; 620 nm; HgI2; ITO; InSnO; SEM; charge collection; cross-sectional scanning electron microscopy; detector performance; multipassed zone refined high-purity starting material; photoluminescence; physical vapor technique; polycrystalline films; room-temperature α-particle response; uniform surface morphology; Current measurement; Detectors; Glass; Impurities; Indium tin oxide; Photoluminescence; Refining; Scanning electron microscopy; Surface morphology; Transistors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.801516
  • Filename
    1043610