DocumentCode :
851911
Title :
Polycrystalline mercuric iodide films: deposition, properties, and detector performance
Author :
Roy, U.N. ; Cui, Y. ; Wright, G. ; Barnett, C. ; Burger, A. ; Franks, L.A. ; Bell, Z.W.
Author_Institution :
Center for Photonic Mater. & Devices, Fisk Univ., Nashville, TN, USA
Volume :
49
Issue :
4
fYear :
2002
fDate :
8/1/2002 12:00:00 AM
Firstpage :
1965
Lastpage :
1967
Abstract :
We report the room-temperature α-particle response of a detector fabricated from high-purity polycrystalline mercuric iodide thin films. The films are deposited by physical vapor technique using multipassed zone refined high-purity starting material. Films approximately 15 μm thick were deposited on indium-tin-oxide (ITO) coated glass substrate and were shown to be reasonably compact and have uniform surface morphology by cross-sectional scanning electron microscopy study. Photoluminescence at 10 K showed two distinct peaks at 533 nm and around 560 nm. A previously reported peak at ∼620 nm, mainly attributed to the presence of impurities, was not present. Room-temperature α-particle response measurements were carried out under vacuum and demonstrated that efficient charge collection can be obtained with thin polycrystalline HgI2. We have demonstrated that a full energy peak is developed, although first indications are that the performance is significantly poorer than a silicon charged particle detector. Charge collection was found to improve with voltage, as expected.
Keywords :
alpha-particle detection; mercury compounds; photoluminescence; scanning electron microscopy; semiconductor counters; semiconductor materials; surface structure; vapour deposited coatings; vapour deposition; 10 K; 15 micron; 293 K; 533 nm; 560 nm; 620 nm; HgI2; ITO; InSnO; SEM; charge collection; cross-sectional scanning electron microscopy; detector performance; multipassed zone refined high-purity starting material; photoluminescence; physical vapor technique; polycrystalline films; room-temperature α-particle response; uniform surface morphology; Current measurement; Detectors; Glass; Impurities; Indium tin oxide; Photoluminescence; Refining; Scanning electron microscopy; Surface morphology; Transistors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.801516
Filename :
1043610
Link To Document :
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