Title :
Infrared and visible light emission from forward-biased P-N junctions
Author_Institution :
Massachusetts Institute of Technology, Lexington, Mass.
fDate :
3/1/1963 12:00:00 AM
Abstract :
Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
Keywords :
Bipolar transistors; Character recognition; Electrical capacitance tomography; Equations; FETs; Frequency modulation; P-n junctions; Semiconductor devices; Semiconductor diodes; Transmitters;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1963.2050
