Title :
Comments on "Linearization techniques for nth-order sensor models in MOS VLSI technology
Author :
Czarnul, Zdzlslaw
Author_Institution :
Dept. of Electron. Circuits, Tech. Univ. of Gdansk, Poland
Abstract :
For the original article see ibid., vol.CAS-38, no.12, p.1439-49 (1991). The commenter points out that the concept of a circuit with four cross-coupled MOSFETs operating in the triode region, in which nonlinearities are canceled, was developed by him (ibid., vol.CAS-33, p.714-16 and 718-22, July 1986). This was not acknowledged by N.I. Khachab and M. Ismail, the authors of the above-titled paper.<>
Keywords :
MOS integrated circuits; VLSI; electric sensing devices; linearisation techniques; semiconductor device models; MOS VLSI technology; four cross-coupled MOSFETs; nonlinearities cancellation; nth-order sensor models; triode region; Active filters; Consumer electronics; Differential equations; Electronic circuits; Integrated circuit synthesis; Integrated circuit technology; Linearization techniques; MOSFET circuits; Solid state circuits; Very large scale integration;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
