Title :
94 GHz low-noise HEMT
Author :
Chao, P.C. ; Duh, K.H.G. ; Ho, Paul ; Smith, P.M. ; Ballingall, J.M. ; Tiberio, R.C.
Author_Institution :
Electron Lab., Gen. Electr. Co., Syracuse, NY, USA
fDate :
4/13/1989 12:00:00 AM
Abstract :
A high-performance 0.1 mu m gate-length, AlGaAs/GaInAs/GaAs pseudomorphic high electron mobility transistor has been successfully developed. The device exhibits a minimum noise figure as low as 3.0 dB with an associated gain of 5.1 dB at 94 GHz. This is the first low-noise operation of transistors at 94 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 3.0 dB; 5.1 dB; 94 GHz; AlGaAs-GaInAs-GaAs; III-V semiconductors; gain; low-noise operation; noise figure; pseudomorphic high electron mobility transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890345
