• DocumentCode
    852141
  • Title

    94 GHz low-noise HEMT

  • Author

    Chao, P.C. ; Duh, K.H.G. ; Ho, Paul ; Smith, P.M. ; Ballingall, J.M. ; Tiberio, R.C.

  • Author_Institution
    Electron Lab., Gen. Electr. Co., Syracuse, NY, USA
  • Volume
    25
  • Issue
    8
  • fYear
    1989
  • fDate
    4/13/1989 12:00:00 AM
  • Firstpage
    504
  • Lastpage
    505
  • Abstract
    A high-performance 0.1 mu m gate-length, AlGaAs/GaInAs/GaAs pseudomorphic high electron mobility transistor has been successfully developed. The device exhibits a minimum noise figure as low as 3.0 dB with an associated gain of 5.1 dB at 94 GHz. This is the first low-noise operation of transistors at 94 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 3.0 dB; 5.1 dB; 94 GHz; AlGaAs-GaInAs-GaAs; III-V semiconductors; gain; low-noise operation; noise figure; pseudomorphic high electron mobility transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890345
  • Filename
    46130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852141