Title :
0.15 mu m GaAs MESFETs applied to ultrahigh-speed static frequency dividers
Author :
Enoki, T. ; Sugitani, S. ; Yamane, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
4/13/1989 12:00:00 AM
Abstract :
0.15 mu m gate-length FETs fabricated by SAINT using photo lithography are applied to ultrahigh-speed static frequency dividers. Short channel effects are suppressed by a buried p-layer and shallow active layers formed by low energy implantations and rapid thermal annealing. The maximum cutoff frequency of the 0.15 mu m gate-length FETs was 80.6 GHz. The maximum toggle frequency of the LSCFL one-quarter frequency divider is 26.8 GHz with a power dissipation of 263 mW.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; dividing circuits; gallium arsenide; photolithography; 0.15 micron; 26.8 GHz; 263 mW; 80.6 GHz; GaAs; LSCFL; MESFETs; SAINT; buried p-layer; cutoff frequency; low energy implantations; maximum toggle frequency; photo lithography; power dissipation; rapid thermal annealing; shallow active layers; ultrahigh-speed static frequency dividers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890350
