Title :
Resistive element using depletion mode MOSFETs
Author :
Shoemaker, P.A. ; Stewart, M. ; Shimabukuro, R.
Author_Institution :
Solid-State Electron. Div., Naval Ocean Syst. Centre, San Diego, CA, USA
fDate :
4/13/1989 12:00:00 AM
Abstract :
A two-terminal resistive element consisting of depletion-mode MOSFETs is described. This circuit can provide a combination of large resistance and extended range of linearity when compared with individual depletion-mode loads. A small-signal AC analysis has been performed to relate the frequency response of the element to the electrical parameters of the transistors and to the operating point. The circuit has been fabricated in thin-film silicon-on-sapphire and its operation demonstrated.
Keywords :
MOS integrated circuits; insulated gate field effect transistors; SOS; depletion mode MOSFETs; electrical parameters; frequency response; operating point; small-signal AC analysis; two-terminal resistive element;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890354
