Title :
L-band DFB laser diodes with output power of 106 mW at 1625 nm
Author :
Kise, T. ; Hiraiwa, K. ; Koizumi, S. ; Yamanaka, N. ; Funabashi, M. ; Kasukawa, A.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
10/10/2002 12:00:00 AM
Abstract :
For the first time, distributed-feedback lasers emitting at 1625 nm with high output power and low operation current are fabricated. Temperature-induced performance degradation is minimised by optimising carrier and optical confinement. Consequently, these L-band lasers show no additional degradation in threshold current with rising temperature compared to C-band lasers.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical transmitters; quantum well lasers; 106 mW; 1625 nm; InGaAsP; L-band DFB laser diodes; carrier confinement; characteristic temperature; conversion efficiency; high output power; high slope efficiency; low operation current; next generation DWDM; optical confinement; sidemode suppression ratio; strain-compensated MQW-SCH; temperature-induced performance degradation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020881
