Title :
Monolithic integration of fully ion-implanted lateral GaInAs pin detector/InP JFET amplifier for 1.3-1.55 mu m optical receivers
Author :
Lee, Woo Seung ; Kitching, S.A. ; Bland, S.W.
Author_Institution :
STC Technol. Ltd., Harlow, UK
fDate :
4/13/1989 12:00:00 AM
Abstract :
An optical receiver front-end consisting of a lateral interdigitated GaInAs pin detector integrated with an InP JFET amplifier has been fabricated. This lateral detector structure simplifies the GaInAs material growth requirement to a single layer and provides low capacitance. A quasiplanar approach has been developed in conjunction with a two-level metallisation interconnect scheme. An optical sensitivity of -29 dBm was measured at 560 Mbit/s and 1.3 mu m wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; 1.3 to 1.55 micron; 560 Mbit/s; InP-GaInAs; JFET amplifier; fully ion-implanted; lateral detector structure; low capacitance; optical receivers; pin detector; quasiplanar approach; receiver front-end; two-level metallisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890357
