Title :
Digital circuit on x=0.35 Hg1-xCdxTe
Author :
Schiebel, R.A. ; Dodge, J. ; Gooch, R.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
4/13/1989 12:00:00 AM
Abstract :
The authors report the demonstration of a digital circuit on HgCdTe. The circuit is a single-bit dynamic shift register, using a ratioless inverter design. The circuit was fabricated on epitaxially grown HgCdTe, with a cutoff wavelength of 3.56 mu m at 77 K. The circuit´s properties are presented and discussed.
Keywords :
II-VI semiconductors; cadmium compounds; digital integrated circuits; field effect integrated circuits; infrared detectors; mercury compounds; shift registers; 3.56 micron; 77 K; Hg 1-xCd xTe; II-VI semiconductors; IR detectors; MISFET IC; ZnS gate insulation; cutoff wavelength; digital circuit; ratioless inverter design; single-bit dynamic shift register;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890363
