Epitaxial Silicon Position Sensitive Detectors

A position sensitive detector has been made on a N-type epitaxial silicon wafer using the epitaxial layer as the uniform resistive layer. The surface barrier electrode is produced on the opposite side of the epitaxial layer by evaporation of gold. The position sensitive detector obtained has good characteristics and moreover it is easy to fabricate. So that the epitaxial technique will be promising even over the conventional ion implantation technique for fabrication of position sensitive silicon detector.