Title :
High performance RF power MOSFET
Author :
Pathirana, G.P.V. ; Udrea, F.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
10/10/2002 12:00:00 AM
Abstract :
A novel high voltage silicon RF LDMOSFET in SOI technology based on the 3D-RESURF concept is proposed. For the same blocking voltage rating, the new structure allows the LDMOSFET to have higher current handling capability at high gate voltages. This in turn causes the transconductance to be higher, leading to overall better RF performance.
Keywords :
UHF field effect transistors; buried layers; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 3D-RESURF concept; LDD resistance; RF power MOSFET; SOI technology; breakdown voltage; buried oxide; current handling capability; cutoff frequency; high performance; high transconductance; high voltage LDMOSFET; maximum unilateral gain; mobile charge; p-drift doping level;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020859
