Title :
High speed, low leakage current InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors
Author :
Kim, Y.M. ; Urteaga, M. ; Rodwell, M.J.W. ; Gossard, A.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fDate :
10/10/2002 12:00:00 AM
Abstract :
InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors were grown on GaAs substrates using a high-thermal-conductivity InP metamorphic buffer layer. 200 GHz fmax were obtained. This fmax is the highest reported for a metamorphic HBT The breakdown voltage BVCEO was 6 V and the DC current gain β was 27. The base-collector reverse leakage current was 54 nA at VCB = 0.3 V.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; millimetre wave bipolar transistors; 200 GHz; DC current gain; Gummel characteristics; InP-In0.53Ga0.47As-InP; RHEED intensity; base-collector reverse leakage current; breakdown voltage; high speed transistors; high-thermal-conductivity buffer layer; low leakage current transistors; metamorphic double heterojunction bipolar transistors; optical projection lithography; selective wet etching; short-circuit current gain; specific contact resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020871
