• DocumentCode
    852435
  • Title

    High speed, low leakage current InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors

  • Author

    Kim, Y.M. ; Urteaga, M. ; Rodwell, M.J.W. ; Gossard, A.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • Volume
    38
  • Issue
    21
  • fYear
    2002
  • fDate
    10/10/2002 12:00:00 AM
  • Firstpage
    1288
  • Lastpage
    1289
  • Abstract
    InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors were grown on GaAs substrates using a high-thermal-conductivity InP metamorphic buffer layer. 200 GHz fmax were obtained. This fmax is the highest reported for a metamorphic HBT The breakdown voltage BVCEO was 6 V and the DC current gain β was 27. The base-collector reverse leakage current was 54 nA at VCB = 0.3 V.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; millimetre wave bipolar transistors; 200 GHz; DC current gain; Gummel characteristics; InP-In0.53Ga0.47As-InP; RHEED intensity; base-collector reverse leakage current; breakdown voltage; high speed transistors; high-thermal-conductivity buffer layer; low leakage current transistors; metamorphic double heterojunction bipolar transistors; optical projection lithography; selective wet etching; short-circuit current gain; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020871
  • Filename
    1043725
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852435