P-type delta-doped SiGe/Si heterostructure field effect transistors

Author

Chien, P.W. ; Wu, S.L. ; Lee, S.C. ; Chang, S.J. ; Miura, H. ; Koh, S. ; Shiraki, Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

38

Issue

21

fYear

2002

fDate

10/10/2002 12:00:00 AM

Firstpage

1289

Lastpage

1291

Abstract

P-type SiGe/Si HFETs with different position of the δ-doped layer in the SiGe channel are reported for the first time. For the same device structure with a 1 × 100 μm² gate, bottom-delta-doped-channel devices display a wide and flat range of uniform g_m distribution of 1.4 V, and 0.9 V in top-delta-doped-channel devices. Compared to the latter devices, a high gate-to-drain breakdown voltage (> 25 V) due to a better carrier confinement together with a higher current density for the bottom-delta-doped-channel devices was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.

Keywords

Ge-Si alloys; high electron mobility transistors; semiconductor device breakdown; semiconductor doping; silicon; BDDC devices; SiGe-Si; TDDC devices; V-shaped quantum well; bottom-delta-doped-channel devices; carrier confinement; heterostructure field effect transistors; high gate-to-drain breakdown voltage; higher current density; hole confinement; molecular beam epitaxy; output drain I-V characteristics; p-type delta-doped; room temperature; smaller bandgap channel; top-delta-doped-channel devices; uniform gain profile;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020851

Filename

1043726