Title :
Power added efficiency optimisation of microwave transistor amplifier
Author :
Algani, A. ; Wang, Huifang ; Konczykowska, Agnieszka
Author_Institution :
CNET, Lab. de Bagneux, France
fDate :
4/13/1989 12:00:00 AM
Abstract :
A high-efficiency microwave amplifier design routine which optimises the power added efficiency of any class (A, AB, B, C, D, E,. . .) of amplifier is reported. It has the advantage of a reduced variable number, and easy synthesis for input-output circuits. A heterojunction bipolar transistor amplifier at 1 GHz for mobile telephone applications has been optimised using this routine. The simulation result shows 71% of power added efficiency under class C operation.
Keywords :
microwave amplifiers; network synthesis; optimisation; solid-state microwave circuits; time-domain synthesis; transistor circuits; design routine; heterojunction bipolar transistor; high-efficiency microwave amplifier; microwave transistor amplifier; mobile telephone applications; optimisation; power added efficiency; time domain design method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890371
