Effect of Boundary Conditions on Thermal Noise of Intrinsic Terminal Currents in Bipolar Transistors Pertinent to Quasi-Ballistic Transport

This paper examines the impact of quasi-ballistic transport (QBT) on bipolar transistor (BJT) intrinsic terminal current noise by analytically solving the general 3-D minority carrier noise transport equation using Hansen´s nonhomogenous boundary conditions with extensions to include injection noise. Transistor noises are further expressed in Y-parameters, as was done in the widely used van Vliet model, with extra corrections accounting for QBT. For 10-nm base width of BJTs without base built-in field, while QBT is significant in affecting I_C, S_ic is shown to be less than but close to the classic 2qI_C.