• DocumentCode
    852658
  • Title

    GaAs/AlGaAs power heterobipolar transistor fabricated on silicon substrate

  • Author

    Ueda, Daisuke ; Lee, Woo Seung ; Ma, Tan ; Costa, David ; Harris, James S.

  • Author_Institution
    Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
  • Volume
    25
  • Issue
    19
  • fYear
    1989
  • Firstpage
    1268
  • Lastpage
    1269
  • Abstract
    A GaAs/AlGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2.8 compared with that on bulk GaAs. Due to the newly developed monolithically grown ballast resistor in the emitter region, the experimentally fabricated device has shown the highest collector current of over 2.5 A for a device with an active device area of 0.14 mm2.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power transistors; 2.5 A; GaAs-AlGaAs-Si; III-V semiconductors; Si substrate; collector current; emitter region; heterojunction bipolar transistor; monolithically grown ballast resistor; power HBT; thermal conductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890849
  • Filename
    46171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852658