• DocumentCode
    852677
  • Title

    Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switch

  • Author

    Hernandez-Gil, F. ; Koch, T.L. ; Koren, U. ; Gnall, R.P. ; Burrus, C.A.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    25
  • Issue
    19
  • fYear
    1989
  • Firstpage
    1271
  • Lastpage
    1272
  • Abstract
    The authors report the successful monolithic integration of a GaInAsP/InP single-mode Delta kappa directional coupler switch with a 4-section tunable multiple-quantum-well distributed Bragg reflector laser. They obtain several mW of output power through the switch, with approximately 10 dB crosstalk either from the internal laser source or with external light injected through the parallel input port.
  • Keywords
    III-V semiconductors; directional couplers; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; laser tuning; optical couplers; optical switches; optical waveguides; semiconductor junction lasers; GaInAs-GaInAsP; GaInAs-InP; III-V semiconductors; MQW-DBR laser; directional coupler switch; distributed Bragg reflector laser; integrated optics; integrated optoelectronics; monolithic integration; multiple-quantum-well; optical waveguides; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890851
  • Filename
    46173