DocumentCode
852677
Title
Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switch
Author
Hernandez-Gil, F. ; Koch, T.L. ; Koren, U. ; Gnall, R.P. ; Burrus, C.A.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
25
Issue
19
fYear
1989
Firstpage
1271
Lastpage
1272
Abstract
The authors report the successful monolithic integration of a GaInAsP/InP single-mode Delta kappa directional coupler switch with a 4-section tunable multiple-quantum-well distributed Bragg reflector laser. They obtain several mW of output power through the switch, with approximately 10 dB crosstalk either from the internal laser source or with external light injected through the parallel input port.
Keywords
III-V semiconductors; directional couplers; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; laser tuning; optical couplers; optical switches; optical waveguides; semiconductor junction lasers; GaInAs-GaInAsP; GaInAs-InP; III-V semiconductors; MQW-DBR laser; directional coupler switch; distributed Bragg reflector laser; integrated optics; integrated optoelectronics; monolithic integration; multiple-quantum-well; optical waveguides; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890851
Filename
46173
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