DocumentCode
852716
Title
High-power 1.06 mu m GaInAsP DCPBH lasers
Author
van der Hofstad, G.L.A. ; van der Laar, P. ; Boermans, M. ; van der Poel, C.J.
Volume
25
Issue
19
fYear
1989
Firstpage
1277
Lastpage
1278
Abstract
High-power 1.06 mu m double channel planar buried-heterostructure (DCPBH) lasers have been fabricated by liquid-phase epitaxy. AT 20 degrees C, the threshold current is 80 mA and CW output powers of 20 mW can be obtained. Under pulsed operation, quantum efficiencies of 0.37 W/A per facet and maximum pulse output powers of 150 mW are realised, while maintaining the lowest-order spatial mode and a symmetrical far-field distribution.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.06 micron; 150 mW; 20 degC; 20 mW; 80 mA; CW output powers; DCPBH lasers; GaInAsP; III-V semiconductors; LPE; double channel; high power BH lasers; liquid-phase epitaxy; lowest-order spatial mode; maximum pulse output powers; planar buried-heterostructure; pulsed operation; quantum efficiencies; semiconductor lasers; symmetrical far-field distribution; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890855
Filename
46177
Link To Document