Title :
Novel Error Detection Scheme With the Harmonious Use of Parity Codes, Well-Taps, and Interleaving Distance
Author :
Sang Hoon Jeon ; Soonyoung Lee ; Sanghyeon Baeg ; Ilgon Kim ; Gunrae Kim
Author_Institution :
Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea
Abstract :
This paper explores the effectiveness of error detection schemes in increasingly multiple-cell upset-dominant technologies, specifically SRAM. A review of interleaving distance, parity codes, and well-taps is conducted to examine each attribute. Then, the paper proposes a novel error detection scheme with the harmonious use of the multiple-cell upset inhibition effects of well-taps, the detectability of parity codes, and an interleaving distance scheme to create an effective error detection scheme that is both flexible and has a high implementation prospect. A row depth model is created to assess the effectiveness of the proposed scheme. The model shows that advanced technologies with greater multiple-cell upset sizes and ratios will experience error detection failures with schemes such as single error correction-double error detection, whereas the proposed scheme remains effective. Experimental data supports the premise that well-taps inhibit multiple-cell upset, as it is found that 1% cross well-taps. The proposed scheme is recognized to be at least three times better against error detection failures than single error correction-double error detection.
Keywords :
error detection codes; nuclear electronics; parity check codes; SRAM; effective error detection scheme; error detection failures; interleaving distance scheme; multiple-cell upset-dominant technologies; novel error detection scheme; parity codes detectability; parity codes harmonious use; row depth model; single-error correction-double error detection; Companies; Equations; Error correction codes; Feature extraction; Performance evaluation; Random access memory; Reliability; Effective interleaving distance; error correction code; interleaving distance; multiple-bit upset; multiple-cell upset; parity code; row depth; single error correction-double error detection; single-event effect; well-tap;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2349504