DocumentCode
85296
Title
Piezoelectric Strain Modulation in FETs
Author
Van Hemert, Tom ; Hueting, Raymond J. E.
Author_Institution
Mesa Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
Volume
60
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
3265
Lastpage
3270
Abstract
We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.
Keywords
MOSFET; piezoelectric devices; FET; gate-source voltage; leakage current; mechanical simulation; piezoelectric layer; piezoelectric strain modulation; FinFETs; Logic gates; Modulation; Silicon; Strain; CMOS; FinFET; piezoelectric effect; power; strain; subthreshold swing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2274817
Filename
6581880
Link To Document