Solution-Processed Barium Zirconate Titanate for Pentacene-Based Thin-Film Transistor and Memory

Author

Adriyanto, Feri ; Chih-Kai Yang ; Tsung-Yu Yang ; Chia-Yu Wei ; Yeong-Her Wang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1241

Lastpage

1243

Abstract

Pentacene-based organic thin-film transistors with solution-processed barium zirconate titanate dielectric layers are demonstrated. According to the programming/erasing operations, the devices exhibited memory characteristics, such as reversible threshold voltage shifts and nondestructive readout. In addition, the reliability of the memory devices was confirmed by data retention time and repeated switching cycles´ endurance testing. In addition, the possible mechanism of the memory effect was also discussed. These results suggest that the devices could potentially be applied to nonvolatile memory applications in organic electronics.

Keywords

barium compounds; dielectric devices; nondestructive readout; organic semiconductors; random-access storage; semiconductor device reliability; semiconductor device testing; thin film transistors; data retention time; dielectric layers; erasing operations; memory characteristics; memory devices reliability; memory effect; nondestructive readout; nonvolatile memory applications; organic electronics; pentacene-based organic thin-film transistors; programming operations; repeated switching cycles endurance testing; reversible threshold voltage shifts; solution-processed barium zirconate titanate; Barium; Dielectrics; Logic gates; Nonvolatile memory; Programming; Thin film transistors; Barium zirconate titanate (BZT); memory; organic thin-film transistors (OTFT); pentacene; solution-process;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2273365

Filename

6581881