Title :
Ten-thousand-hours CW operation of 780 nm high-power AlGaAs laser with thin-tapered thickness active layer
Author :
Shima, Akio ; Saito, Hiroshi ; Matsubara, H. ; Kumabe, H.
Author_Institution :
Optoelectronic & Microwave Devices Res. & Dev. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The authors investigated the effectiveness of the T3 (thin-tapered thickness active layer) structure in reducing the carrier density in the active layer as well as the optical density near the mirror. 780 nm AlGaAs lasers with this structure have been operating under 50 degrees C, 30 mW CW (continuous wave) conditions over 104 h with little degradation. The minimal degradation rate is about 0.45%/103 h.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; laser transitions; semiconductor junction lasers; 1*10 4 h; 30 mW; 50 degC; 780 nm; AlGaAs laser; CW operation; carrier density reduction; continuous wave; optical density reduction; semiconductor lasers; thin-tapered thickness active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890863
