• DocumentCode
    853177
  • Title

    Ten-thousand-hours CW operation of 780 nm high-power AlGaAs laser with thin-tapered thickness active layer

  • Author

    Shima, Akio ; Saito, Hiroshi ; Matsubara, H. ; Kumabe, H.

  • Author_Institution
    Optoelectronic & Microwave Devices Res. & Dev. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    25
  • Issue
    19
  • fYear
    1989
  • Firstpage
    1290
  • Lastpage
    1291
  • Abstract
    The authors investigated the effectiveness of the T3 (thin-tapered thickness active layer) structure in reducing the carrier density in the active layer as well as the optical density near the mirror. 780 nm AlGaAs lasers with this structure have been operating under 50 degrees C, 30 mW CW (continuous wave) conditions over 104 h with little degradation. The minimal degradation rate is about 0.45%/103 h.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; laser transitions; semiconductor junction lasers; 1*10 4 h; 30 mW; 50 degC; 780 nm; AlGaAs laser; CW operation; carrier density reduction; continuous wave; optical density reduction; semiconductor lasers; thin-tapered thickness active layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890863
  • Filename
    46185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=853177