DocumentCode
85331
Title
Energy storage properties of nano-grained antiferroelectric (Pb,La)(Zr,Ti)O3 films prepared by aerosol-deposition method
Author
Soo-Bin Kang ; Min-Geun Choi ; Dae-Yong Jeong ; Young-Min Kong ; Jungho Ryu
Author_Institution
Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea
Volume
22
Issue
3
fYear
2015
fDate
Jun-15
Firstpage
1477
Lastpage
1482
Abstract
Antiferroelectric films of Sn doped Lead Lanthanum Zirconate-Titanate [(Pb, La)(Sn, Zr, Ti)O3, Sn-PLZT] with nano-grains were fabricated by aerosol-deposition (AD). The AD process produced highly dense films without visible pores. The polarization-electric field hysteresis loop and the phase transition behavior of PLZT with Sn doping into the B-sites were characterized. The grain sizes of the AD Sn-PLZT films, which were on the nano-scale, were controlled by the annealing temperature. Regardless of the compositions, the films with the nano-grains by the AD process showed less hysteretic behavior and larger stored energy. The Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 (PL-0.13) film deposited by AD and annealed at 750 °C for 1 h showed an energy storage capacity and efficiency of 13.0 J/cm3 and 78.9 %, respectively.
Keywords
annealing; antiferroelectric materials; dielectric hysteresis; energy storage; ferroelectric storage; ferroelectric thin films; ferroelectric transitions; grain size; lanthanum compounds; lead compounds; nanofabrication; nanostructured materials; B-sites; Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3; aerosol-deposition method; annealing temperature; doping; energy storage capacity; grain size; highly dense films; hysteretic behavior; nanograin films; nanograined antiferroelectric films; phase transition behavior; polarization-electric field hysteresis loop; temperature 750 degC; time 1 h; Annealing; Ceramics; Dielectric constant; Energy storage; Films; Hysteresis; Tin; Ferroelectric films; aerosols; dielectric breakdown; energy storage;
fLanguage
English
Journal_Title
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
1070-9878
Type
jour
DOI
10.1109/TDEI.2015.7116340
Filename
7116340
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