DocumentCode :
853611
Title :
Doping of semiconductors for injection lasers
Author :
Keyes, Robert W
Volume :
51
Issue :
4
fYear :
1963
fDate :
4/1/1963 12:00:00 AM
Firstpage :
602
Lastpage :
602
Keywords :
Conductors; Energy states; Physics; Q measurement; Radiative recombination; Semiconductor device doping; Semiconductor lasers; Semiconductor process modeling; Stimulated emission; Thermodynamics;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2208
Filename :
1444138
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=853611
