DocumentCode
854217
Title
Baseband impedance and linearization of FET circuits
Author
Brinkhoff, James ; Parker, Anthony Edward ; Leung, Martin
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
51
Issue
12
fYear
2003
Firstpage
2523
Lastpage
2530
Abstract
Baseband impedance has been identified as having a positive or negative effect on the intermodulation distortion of microwave circuits. The effect can be assessed or utilized with the aid of previously proposed figures-of-merit. Under certain situations, intermodulation cancellation can be achieved simply by adding resistance to the bias network. The impact of baseband impedance on the performance of derivative superposition amplifiers is analyzed. A bias region was studied that exhibits a good second- and third-order intermodulation with minimal intermodulation dependence on baseband impedance. This allows the effective use of the derivative superposition technique in baseband amplifiers, as well as giving wide-band linearization performance in RF amplifiers.
Keywords
intermodulation distortion; linearisation techniques; microwave amplifiers; microwave circuits; microwave field effect transistors; FET circuits; RF amplifiers; baseband amplifiers; baseband impedance; bias network; bias region; derivative superposition amplifiers; derivative superposition technique; figure of merit; intermodulation cancellation; intermodulation distortion; microwave circuits; resistance; second-order intermodulation; third-order intermodulation; wide-band linearization; Bandwidth; Baseband; Broadband amplifiers; FET circuits; Frequency; Impedance; Intermodulation distortion; Microwave circuits; Nonlinear distortion; Radiofrequency amplifiers;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2003.819208
Filename
1256785
Link To Document