Interaction of interface-traps located at various sites in MOSFETs under stress

Author

Chen, Gang ; Li, M.-F. ; Jin, Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

51

Issue

4

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

387

Lastpage

391

Abstract

Interaction of interface traps at different sites in p-MOS transistors under electrical stresses was observed. We report the following phenomenon: generation of interface traps in the basewell-channel (BC) region under Fowler-Nordheim (FN) stress causes reduction and migration of interface traps in the drain junction space charge (JSC) region induced by hot carrier (HC) stress. This phenomenon is tentatively interpreted by a 3-cell difference model of hydrogen release and absorption during interface trap generation and passivation. This effect is important in hot carrier degradation and lifetime projection in MOS transistors.

Keywords

MOSFET; annealing; hot carriers; interface states; p-n junctions; passivation; semiconductor device reliability; semiconductor device testing; semiconductor-insulator boundaries; space charge; 3-cell difference model; Fowler-Nordheim stress; MOSFET; annealing; basewell-channel region; drain junction space charge region; electrical stresses; hot carrier; hot carrier degradation; hot carrier stress; hydrogen absorption; hydrogen release; interface trap generation; interface traps; interface-traps interaction; lifetime projection; p-MOS transistors; passivation; semiconductor device reliability; semiconductor-insulator interface; Absorption; Degradation; Electron traps; Hot carriers; Hydrogen; MOSFET circuits; Passivation; Residual stresses; Space charge; Testing;

fLanguage

English

Journal_Title

Reliability, IEEE Transactions on

Publisher

ieee

ISSN

0018-9529

Type

jour

DOI

10.1109/TR.2002.804485

Filename

1044336