Title :
Carbon-doped base AlGaAs/GaAs HBTs grown by MOCVD using TMAs
Author :
Ito, H. ; Kobayashi, Takehiko ; Ishibashi, Takayuki
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
AlGaAs/GaAs HBTs with carbon-doped bases are grown by conventional low-pressure MOCVD using trimethylarsine as the carbon source for the first time. The obtained current gain values of 100 for 5*1018 cm-3 base doping and 40 for 1*1019 cm-3 base doping reveal the feasibility of trimethylarsine as a p-type dopant source for MOCVD growth.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor growth; AlGaAs-GaAs:C; C doped bases; HBTs; III-V semiconductors; MOCVD; base doping; carbon source; chemical vapour deposition; current gain; heterojunction bipolar transistors; low-pressure MOCVD; p-type dopant source; semiconductor growth; trimethylarsine;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890871
