Title :
7 GHz bandwidth optical front-end circuit using GaAs FET monolithic IC technology
Author :
Miyagawa, Y. ; Miyamoto, Yutaka ; Hagimoto, Ken
Author_Institution :
NTT Transmission Syst. Labs., Kanagawa, Japan
Abstract :
A GaAs FET monolithic integrated transimpedance preamplifier for 10 Gbit/s optical fibre transmission is realised using a newly developed capacitor peaking technique. A 3 dB bandwidth of 8.6 GHz and 19 dB gain is achieved in S-parameter measurements. A 3 dB bandwidth of 7 GHz and -12.0 dBm sensitivity at 10 Gbit/s are achieved in an optical front-end circuit with a GaInAs p-i-n photodiode.
Keywords :
S-parameters; digital communication systems; field effect integrated circuits; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodiodes; preamplifiers; wideband amplifiers; 10 Gbit/s; 19 dB; 7 GHz; BER performance; FET monolithic IC technology; GaAs; GaInAs; S-parameter measurements; capacitor peaking technique; integrated transimpedance preamplifier; optical fibre transmission; optical front-end circuit; p-i-n photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890873
