DocumentCode :
854336
Title :
Light-coupled negative-resistance device in GaAs
Author :
Jensen, H.A.
Volume :
51
Issue :
5
fYear :
1963
fDate :
5/1/1963 12:00:00 AM
Firstpage :
852
Lastpage :
853
Keywords :
Electron traps; Gallium arsenide; III-V semiconductor materials; Impedance; Insulation; Light emitting diodes; Semiconductor diodes; Stimulated emission; Switches; Temperature;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2286
Filename :
1444216
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=854336
