• DocumentCode
    854443
  • Title

    Simulation of thermal diffusion in transistors using transmission line matrix modelling

  • Author

    Webb, P.W.

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
  • Volume
    4
  • Issue
    6
  • fYear
    1992
  • fDate
    12/1/1992 12:00:00 AM
  • Firstpage
    362
  • Lastpage
    366
  • Abstract
    A variety of solid-state devices are being developed for use in systems where they are required to produce pulses of microwave power at specified duty cycles. The design of these devices is interesting as they will be smaller and have less thermal capacity than an equivalent continuous-wave source generating the same microwave power. This size reduction is important as it can result in improved electrical efficiency and a higher frequency of operation. The author describes the application of transmission line matrix diffusion modelling to the transient thermal design of a transistor structure and compares the technique with finite difference and finite element approaches
  • Keywords
    heterojunction bipolar transistors; matrix algebra; semiconductor device models; solid-state microwave devices; thermal diffusivity; transmission line theory; heat conduction; heterojunction bipolar transistors; microwave power devices; simulation; thermal diffusion; transient thermal design; transistors; transmission line matrix modelling;
  • fLanguage
    English
  • Journal_Title
    Electronics & Communication Engineering Journal
  • Publisher
    iet
  • ISSN
    0954-0695
  • Type

    jour

  • Filename
    194038