Title :
Optical waveguide phase modulator in GaInAsP using depletion edge translation
Author :
Kowalsky, Wolfgang ; Ebeling, K.J.
fDate :
4/28/1988 12:00:00 AM
Abstract :
Under reverse bias a phase shift per unit length of up to 500°/mm is observed in a GaInAsP/InP inverted rib waveguide embedded in a double-heterostructure pin diode. The waveguides were fabricated by wet chemical etching and subsequent liquid phase epitaxy. Diodes were formed by selective Zn diffusion in the InP cladding layer. The planar structure is favourable for integration with other electronic or optoelectronic devices
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical modulation; optical waveguide components; DH PIN diode; GaInAsP-InP inverted rib waveguide; InP cladding layer; depletion edge translation; liquid phase epitaxy; optical waveguide phase modulator; optoelectronic integration; phase shift; planar structure; reverse bias; selective Zn diffusion; wet chemical etching;
Journal_Title :
Electronics Letters
