DocumentCode
854831
Title
High-performance, high-reliability buried heterostructure lasers by MOVPE
Author
Cooper, Diana Marina ; Cole, Stijn ; Devlin, W.J. ; Hobbs, R.E. ; Nelson, A.W. ; Regnault, J.C. ; Sim, S.P. ; Spurdens, P.C.
Author_Institution
British Telecom Res. Labs., Martlesham Heath, Ipswich
Volume
24
Issue
9
fYear
1988
fDate
4/28/1988 12:00:00 AM
Firstpage
519
Lastpage
521
Abstract
The authors report the first highly reliable all-MOVPE BH lasers. These devices have extremely low threshold currents (≃10 mA) and show excellent uniformity of device characteristics. Data are presented to show the high yields achieved and demonstrate the very low degradation rates achieved under accelerated aging
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 1.55 micron; 10 mA; GaInAs-InP lasers; MOVPE; accelerated aging; buried heterostructure lasers; device characteristics uniformity; high yields; high-reliability; low degradation rates; low threshold currents; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
19540
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