Title :
Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy
Author :
Saint-Cricq, B. ; Chatenoud, F. ; Lozes-Dupuy, F. ; Fourtine, S. ; Martinot, H.
Author_Institution :
CNRS, Toulouse
fDate :
4/28/1988 12:00:00 AM
Abstract :
The letter reports short wavelength emission (7205 Å) from MBE AlGaAs GRINSCH single quantum well lasers. Visible emission is obtained with a 60 Å AlGaAs well containing ≃18% aluminium and both design optimisation and growth conditions lead to low-threshold operation. Broad area Fabry-Perot diodes have threshold current densities as low as 390 A/cm2 and 670 A/cm2 for cavity lengths of 500 μm and 250 μm, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 250 micron; 500 micron; 7205 Å; AlGaAs; Fabry-Perot diodes; GRINSCH single quantum well lasers; cavity lengths; design optimisation; growth conditions; low threshold current density; molecular beam epitaxy; semiconductor laser; short wavelength emission; visible lasers;
Journal_Title :
Electronics Letters
