DocumentCode :
854987
Title :
Characterization of Semiconductor Materials by Charged Particle Activation
Author :
Blondiaux, G. ; Giovagnoli, A. ; Koemmerer, C. ; Valladon, M. ; Debrun, J.L. ; Hallais, J. ; Huber, A.
Author_Institution :
C.N.R.S., Service du Cyclotron, 3A, Rue de la Férollerie, 45045 Orléans cedex (France)
Volume :
28
Issue :
2
fYear :
1981
fDate :
4/1/1981 12:00:00 AM
Firstpage :
1675
Lastpage :
1678
Abstract :
Results obtained during the past few years by research groups working on joint projects, mainly in view of a better knowledge of GaAs, are summarized here. The procedures of radioactivation analysis with charged particles (deuterons and tritons) are described to some extent. Finally, some important aspects of charged particle activation analysis, namely : calibration, etching after irradiation and diffusion during irradiation, are discussed.
Keywords :
Activation analysis; Calibration; Cyclotrons; Epitaxial layers; Etching; Gallium arsenide; Indium phosphide; Instruments; Oxygen; Semiconductor materials;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1981.4331497
Filename :
4331497
Link To Document :
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