Title :
Characterization of Semiconductor Materials by Charged Particle Activation
Author :
Blondiaux, G. ; Giovagnoli, A. ; Koemmerer, C. ; Valladon, M. ; Debrun, J.L. ; Hallais, J. ; Huber, A.
Author_Institution :
C.N.R.S., Service du Cyclotron, 3A, Rue de la Férollerie, 45045 Orléans cedex (France)
fDate :
4/1/1981 12:00:00 AM
Abstract :
Results obtained during the past few years by research groups working on joint projects, mainly in view of a better knowledge of GaAs, are summarized here. The procedures of radioactivation analysis with charged particles (deuterons and tritons) are described to some extent. Finally, some important aspects of charged particle activation analysis, namely : calibration, etching after irradiation and diffusion during irradiation, are discussed.
Keywords :
Activation analysis; Calibration; Cyclotrons; Epitaxial layers; Etching; Gallium arsenide; Indium phosphide; Instruments; Oxygen; Semiconductor materials;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4331497