Title :
9 GHz bandwidth, 8-20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology
Author :
Ishihara, Noboru ; Nakajima, O. ; Ichino, H. ; Yamauchi, Yuji
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A wideband and controllable-gain amplifier utilising a new parallel feedback technique, which can enhance the bandwidth and can control the gain keeping output DC voltages constant, has been developed using AlGaAs/GaAs HBT technology in monolithic form. This IC achieves a wide bandwidth of DC-9 GHz, and a controllable gain range of 8-20 dB with a total power dissipation of 640 mW at a power supply voltage of 9 V.
Keywords :
bipolar integrated circuits; feedback; gain control; heterojunction bipolar transistors; linear integrated circuits; wideband amplifiers; 0 to 9 GHz; 640 mW; 8 to 20 dB; 9 GHz; 9 V; AlGaAs-GaAs; HBT technology; IC; broadband operation; controllable-gain monolithic amplifier; parallel feedback technique; power supply voltage; total power dissipation; wideband;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890881
