• DocumentCode
    855156
  • Title

    Ion Implantation in Compound Semiconductor Research

  • Author

    Streetman, B.G.

  • Author_Institution
    Coordinated Science Laboratory and Department of Electrical Engineering University of Illinois at Urbana-Champaign Urbana, Illinois 61801
  • Volume
    28
  • Issue
    2
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    1741
  • Lastpage
    1746
  • Abstract
    Ion implantation is widely used in the fabrication of III-V compound semiconductor devices for microwave and optoelectronic applications and in high-speed integrated circuits. Other applications employ implantation as a tool for basic semiconductor research. This paper provides an overview of these applications, along with problems in the implantation and annealing of compounds and recent solutions to these problems.
  • Keywords
    Annealing; Gallium arsenide; III-V semiconductor materials; Ion implantation; Optical device fabrication; Semiconductor devices; Semiconductor films; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4331511
  • Filename
    4331511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=855156