DocumentCode
855183
Title
Laser Processing of Ion Implanted Semiconductor Materials for Device Applications
Author
Wilson, S. ; Varker, C. ; Paulson, W.
Author_Institution
Motorola Semiconductor Group Semiconductor Research and Development Laboratories Phoenix, Arizona
Volume
28
Issue
2
fYear
1981
fDate
4/1/1981 12:00:00 AM
Firstpage
1754
Lastpage
1758
Abstract
Both pulsed and CW lasers have been used to anneal ion implanted single crystal silicon, polysilicon and ion implanted devices. The advantages and limitations of each type of laser and laser processing in general is discussed. Our results and those in the literature are compared to conventional thermal anneals. The thermal stability of ion-implanted, laser-annealed, single crystal silicon and polysilicon is reported.
Keywords
Annealing; Conductivity; Laser modes; Optical pulses; Semiconductor impurities; Semiconductor lasers; Semiconductor materials; Silicon; Solid lasers; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1981.4331514
Filename
4331514
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