Laser Annealing of Ion Implanted Silicon

Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes occurring at the interface during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k¿) and the maximum substitutional solubilities (Csmax) are far greater than equilibrium values. Both k¿ and Csmax are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed.