Title :
A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules
Author :
Zhiqiang Wang ; Xiaojie Shi ; Tolbert, Leon M. ; Fei Wang ; Blalock, Benjamin J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
This paper presents an active gate driver (AGD) for IGBT modules to improve their overall performance under normal condition as well as fault condition. Specifically, during normal switching transients, a di/dt feedback controlled current source and current sink is introduced together with a push-pull buffer for dynamic gate current control. Compared to a conventional gate drive strategy, the proposed one has the capability of reducing the switching loss, delay time, and Miller plateau duration during turn-on and turn-off transient without sacrificing current and voltage stress. Under overcurrent condition, it provides a fast protection function for IGBT modules based on the evaluation of fault current level through the di/dt feedback signal. Moreover, the AGD features flexible protection modes, which overcomes the interruption of converter operation in the event of momentary short circuits. A step-down converter is built to evaluate the performance of the proposed driving schemes under various conditions, considering variation of turn-on/off gate resistance, current levels, and short-circuit fault types. Experimental results and detailed analysis are presented to verify the feasibility of the proposed approach.
Keywords :
convertors; fault currents; feedback; insulated gate bipolar transistors; overcurrent protection; AGD; IGBT modules; Miller plateau duration reduction; active gate driver; current levels; current sink; delay time reduction; di-dt feedback controlled current source; fast overcurrent protection; fault current level; feedback signal; flexible protection modes; momentary short circuits; normal switching transients; push-pull buffer; smart switching; step-down converter; switching loss reduction; turn-off transient; turn-on transient; turn-on-off gate resistance; Capacitance; Inductance; Insulated gate bipolar transistors; Logic gates; Switches; Switching loss; Transient analysis; Active gate driver (AGD); IGBT modules; Miller plateau; overcurrent protection; short circuit;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2013.2278794