Author :
Fatimy, A.E. ; Tombet, S. Boubanga ; Teppe, F. ; Knap, W. ; Veksler, D.B. ; Rumyantsev, S. ; Shur, M.S. ; Pala, N. ; Gaska, R. ; Fareed, Q. ; Hu, X. ; Seliuta, D. ; Valusis, G. ; Gaquiere, C. ; Theron, D. ; Cappy, A.
Abstract :
Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K. For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100 K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures
Keywords :
III-V semiconductors; aluminium compounds; electron gas; gallium compounds; high electron mobility transistors; plasma waves; submillimetre wave measurement; wide band gap semiconductors; 0.2 to 2.5 THz; 2D electron gas; 4 to 300 K; GaN-AlGaN; cryogenic temperatures; high electron mobility transistors; nonresonant detection; plasma wave excitations; resonant response; room temperatures; terahertz radiation detection;
