DocumentCode :
855358
Title :
Enhanced Backscattering near 180° for Energetic Ions in Solids
Author :
Holland, O.W. ; Appleton, B.R. ; Barrett, J.H.
Author_Institution :
Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37830
Volume :
28
Issue :
2
fYear :
1981
fDate :
4/1/1981 12:00:00 AM
Firstpage :
1824
Lastpage :
1827
Abstract :
A new ion scattering effect which enhances backscattering yields near 180° has been recently reported. A computer program which simulates this scattering effect is discussed and the results compared with measurements. Both the angular distribution and depth profiles of the backscattered yield enhancements are compared. These comparisons verify the proposed explanation for the new scattering phenomena and a tentative explanation is offered for the small discrepancies which exist.
Keywords :
Amorphous materials; Backscatter; Computational modeling; Crystallization; Detectors; Geometry; Laboratories; Scattering; Solid modeling; Solid state circuits;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1981.4331530
Filename :
4331530
Link To Document :
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