• DocumentCode
    855358
  • Title

    Enhanced Backscattering near 180° for Energetic Ions in Solids

  • Author

    Holland, O.W. ; Appleton, B.R. ; Barrett, J.H.

  • Author_Institution
    Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37830
  • Volume
    28
  • Issue
    2
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    1824
  • Lastpage
    1827
  • Abstract
    A new ion scattering effect which enhances backscattering yields near 180° has been recently reported. A computer program which simulates this scattering effect is discussed and the results compared with measurements. Both the angular distribution and depth profiles of the backscattered yield enhancements are compared. These comparisons verify the proposed explanation for the new scattering phenomena and a tentative explanation is offered for the small discrepancies which exist.
  • Keywords
    Amorphous materials; Backscatter; Computational modeling; Crystallization; Detectors; Geometry; Laboratories; Scattering; Solid modeling; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4331530
  • Filename
    4331530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=855358